M.Sc(Engg) Thesis Defence

DEPARTMENT OF INSTRUMENTATION AND APPLIED PHYSICS

                                                                                                  M.Sc(Engg) Thesis Defence

NAME OF THE CANDIDATE             :    Mr. Vineet Rojwal

DEGREE                                                  :    M.Sc(Engg)

TITLE OF THE THESIS                       :     Transition of Amorphous silicon into Microcrystalline               

SUPERVISOR                                           :     Dr. T.K. Mondal.

DATE AND TIME                                  :     Friday,  24^th  January  2020 at 11.00 A.M

VENUE                                                     :     Seminar Hall – 2, Dept. of Instrumentation                                                                                                           and Applied Physics. ____________________________________________________________________________________

Abstract

This thesis investigates the connection between the plasma deposition conditions and microcrystalline silicon (µc-Si: H) material quality for optoelectronic thin film devices, especially for thin-film silicon photovoltaic and temperature sensing applications. The role of interfaces and the quality of µc-Si: H on the device performance are analysed in detail. The microcrystalline hydrogenated-silicon (also called polymorphous silicon) consisting a two-phase mixture of amorphous and structured silicon. µc-Si: H thin films are deposited using radio frequency (13.56 MHz) Plasma Enhanced ChemicalVapour Deposition (RF-PECVD) by varying the doping gases (diborane (B₂H₆) and phosphine (PH₃)) flow, hydrogen-silane dilution ratio (R=H₂/SiH₄), film thickness and post annealing condition to optimize the recipes of µc-Si: H in terms of crystalline fraction and electrical conductivity. Micro-Raman spectroscopy is used to investigate these variations mentioned above, on the transition fraction regime from amorphous into micro-structured silicon. In this work, we present the characterization of thin films (both doped and undoped) deposited at the temperature of 250 ⁰C on quartz substrate after annealed at 550 ⁰C in N₂-ambient, thus crystallinity percentage up to 90 % for p-type, 96% for n-type and 80 % for undoped films are achieved.

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                                                                       ALL ARE WELCOME

                                                                                                                            CHAIRMAN

Date/Time
Date(s) - 24/01/2020
11:00 am

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