Lecture on: High-frequency Magnetics: From Materials to Devices



BANGALORE – 560 012

 Cordially invites you for a short lecture on

                          “High-frequency Magnetics: From Materials to Devices and                                          Systems”                                                                          


 Dr. Ranajit Sai 

 PhD in Nanoengineering for Integrated Systems (Interdisciplinary)

MTech in Nano Science and Technology

BTech in Instrumentation Engineering

 Date:  Wednesday, 12th February 2020

 Time:    3.00 P.M

 Venue:  Lecture Hall 1, Dept. of Instrumentation and

Applied  Physics



 This transforming era of IoT and 5G is witness to a technological revolution that demands innovation in two key vectors – miniaturization and efficiency of devices. Be it power supply or sensor, be it the system-on-a-chip or the lab-on-a-chip, innovation in materials and its integration to the desired system are the way forward. The impact of high-frequency magnetics envelops the performance of radio frequency front-end circuits, the efficiency and power density of miniaturized power converters, the selectivity and sensitivity of a biomagnetic sensor, the development of a futuristic interconnect technology, etc. to name a few. And the challenges ahead are both in terms of identifying and obtaining appropriate high-frequency magnetic characteristics in a material and the integration of the same according to the application requirements.


This talk will sketch the recent trends and pain-points of developing on-chip inductors and Addressing electromagnetic noise issues in this age of IoT and 5G. In the first part of the talk, the scientific rationale behind choosing a magnetic material suitable for high-frequency inductor core and the way to integrate the same on a silicon SoC or on a power SoC will be discussed. It will be demonstrated that it was necessary not only to delve into the crystal structure of the material to achieve desired core characteristics but also to develop a new deposition technique to get the same material deposited on-chip in a CMOS-compatible manner. In the second part of the talk, the focus will be on a case-study of the assessment of the impact of EM noise radiated from an EV-grade power converter on some nearby mobile communication systems and how to develop a countermeasure of this EMI/EMC issue. Finally, in the third part of the talk, a future outlook of some of the exciting research problems that can sprout out of the aforesaid discussion and can flourish eventually as some new enabling technologies will be illustrated.


Brief Biography:


Dr. Ranajit Sai received his PhD in an interdisciplinary program – Nanoengineering for Integrated Systems from IISc in 2014, in which he designed and developed an on-chip ferrite-core inductor for which an US patent has been granted.

After his graduation, Dr. Sai joined Tohoku University in Sendai, Japan as an assistant professor – elevated from his brief six-month stint as a postdoc there – and served in the Dept. of Electrical Engg. for three years and in an interdisciplinary centre, NICHe, for eight months. Since February 2018 he has been affiliated to CeNSE at IISc as a visiting professor.






Date(s) - 12/02/2020
3:00 pm - 4:15 pm

Lecture Hall-1, Dept. of Instrumentation & Applied Physics.
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