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Aluminium coated carbon nanotube film for\nwavelength-selective surface<\/strong><\/p>\n\n\n\n The measured thermal diffusivity of purified CNT and\nAl-CNT films were 1.63×10-4<\/sup> and 1.88×10-3<\/sup> cm2<\/sup>\/s,\nrespectively. These results suggest that Al coating has improved the\nconnectivity between MWCNT by reducing the porosity; therefore, it resulted in\nan improved thermal diffusion as compared to CNT film alone. This higher\nthermal diffusivity could be additional advantage for the reflective CNT films to\ndissipate the absorbed heat in the system such as solar collectors.<\/p>\n\n\n\n Reference: APPLIED PHYSICS LETTERS 103, 131909 (2013)<\/p>\n\n\n\n https:\/\/doi.org\/10.1063\/1.4822305<\/a><\/p>\n\n\n\n Broadband wavelength-selective reflectance and\nselective polarization by tip-bent vertically aligned multi-walled carbon\nnanotube forest<\/strong><\/p>\n\n\n\n Figure: Schematic diagram of the CNT forest after\nmechanical bending and compression. SEM image shows a cross-sectional view of\nthe mechanically processed CNTs, revealing buckling along the axial direction\nof the CNTs (arrow indicates the direction of buckling of the sample and\nvertical compression). Schematic showing the contribution of the parallel and\nperpendicular dielectric towards the optical reflectance from the MWCNT and the\ntip-bent CNT surface. Optical reflectance plotted against incident wavelength\nto demonstrate a dependence of the optical reflectance on the bending of the\nCNT forest. The bottom spectrum shows the result from the MWCNT forest and the\nupper spectrum shows a reflectance from the surface of the bent-CNT forest.\nInsets show a schematic of the respective samples.<\/p>\n\n\n\n Reference: J. Phys. D: Appl. Phys. 47 (2014) 235501.<\/p>\n\n\n\n DOI: 10.1088\/0022-3727\/47\/23\/235501<\/p>\n\n\n\n Nonlinear optical absorption in a graphene infrared\nphotodetector<\/strong><\/p>\n\n\n\n Figure: Optical image of the graphene transferred onto\nthe SiO2<\/sub> substrate. The changes in the normalized resistance during\nsaturation are plotted with different angles of incidence at various IR powers.\nchange in the carrier concentration is plotted with the different angle of IR\nincidence for different powers. <\/p>\n\n\n\n Reference: Nanotechnology\n25 (2014) 335710.<\/p>\n\n\n\n https:\/\/doi.org\/10.1088\/0957-4484\/25\/33\/335710<\/a><\/p>\n\n\n\n Enhanced Photoresponse in Monolayer Hydrogenated\nGraphene Photodetector<\/strong><\/p>\n\n\n\n Figure: Schematic of the experimental setup; the\nsource meter is connected to H-graphene placed between gold electrodes, and a\nvariation in the IR incidence angle (30?150\u00b0) is shown by arrows. Normalized\nchange in the resistance is plotted with different angle of incidences for different\nIR powers during saturation. change in the carrier concentration during\ncyclical experiments with the variation in the angle of IR incidence at\ndifferent radiation power.<\/p>\n\n\n\n Reference: ACS Appl. Mater.\nInterfaces 2014, 6, 16763?16768.<\/p>\n\n\n\n DOI: 10.1021\/am503892m<\/a><\/p>\n\n\n\n Few-layer graphene\/ZnO nanowires based high\nperformance UV photodetector<\/strong><\/p>\n\n\n\n Figure: I\u2013V characteristics of the ZnO NWs and G\/ZnO\nNWs device, where the current is plotted on a log scale and the inset plot\nshows the current on a linear scale with the applied bias voltage in both the\nabsence and presence of UV illumination. cyclical photoresponses of ZnO NWs and\nG\/ZnO NWs devices upon UV illumination.<\/p>\n\n\n\n Reference: Nanotechnology 26 (2015) 235703 <\/p>\n\n\n\n https:\/\/doi.org\/10.1088\/0957-4484\/26\/23\/235703<\/a><\/p>\n\n\n\n Highly Dense ZnO Nanowires Grown on Graphene Foam for\nUltraviolet Photodetection<\/strong><\/p>\n\n\n\n Figure: Schematic of ZnO NWs\/GF device. GF at low\nmagnification and high magnification (inset). ZnO NWs on GF. Differential\nconductivity (dI\/dV) of the device plotted with the bias voltage. Saturation\nexperiments at different bias voltage.<\/p>\n\n\n\n Reference: ACS\nAppl. Mater. Interfaces 2015, 7, 10606?10611.<\/p>\n\n\n\n https:\/\/doi.org\/10.1021\/acsami.5b02403<\/a><\/p>\n\n\n\n Photoresponse of double-stacked graphene to Infrared\nradiation<\/strong><\/p>\n\n\n\n Figure: Schematic of the graphene device:\n(a) crossed configuration of graphene layers, (b) parallel configuration of\ngraphene layers, (c) and (d) are optical images of crossed- and parallel-layer\ngraphene devices. The insets in figure (c) show a magnified optical image and\nEDS analysis of crossed graphene layers. Differential conductivity of different\ngraphene samples at angles of IR incidence of (a) 90\u00b0, (b) 120\u00b0.<\/p>\n\n\n\n Reference: Nanoscale,\n2015, 7, 15806\u201315813<\/p>\n\n\n\n https:\/\/doi.org\/10.1039\/C5NR03676C<\/a><\/p>\n\n\n\n Effect of magnetic field on photoresponse of cobalt\nintegrated zincoxide nanorods<\/strong><\/p>\n\n\n\n Figure: Co-ZnO NRs. Bottom and top insets in a and b\nare the high-resolution. TEM images of Co-ZnO NRs. (a) Cyclic photoresponse of\nCo-ZnO NRs at 5 V bias voltage and (b) variation of saturation response current\nwith bias voltage in absence and presence of external magnetic fields.\nDetermination of response and recovery times of (c) Co-ZnO NRs PD and (d)\npristine ZnO NRs PD.<\/p>\n\n\n\n Reference: ACS Applied Materials & Interfaces,\n2016, 8, 4771\u20134780.<\/p>\n\n\n\n https:\/\/doi.org\/10.1021\/acsami.5b11387<\/a><\/p>\n\n\n\n ZnO quantum dots and graphene based\nheterostructure for excellent photoelastic and highly sensitive ultraviolet\nphotodetector<\/strong><\/strong><\/p>\n\n\n\n Figure: Optical images of (a) graphene layers on\nsilicon wafer and (b) drop-casted ZnO QDs between the gap. TEM images of\ncolloidal ZnO QDs. the variation of saturation response current with bias\nvoltage at UV illumination intensity of 1.3 mW cm-2<\/sup>. Time-dependent\ncyclic photoresponse analysis for 54 cycles, where each cycle is for 5 s of UV\nillumination at bias voltage 1 V.<\/p>\n\n\n\n Reference: RSC Advances, 2015, 5, 90838<\/p>\n\n\n\n https:\/\/doi.org\/10.1039\/C5RA18663C<\/a><\/p>\n\n\n\n Sandwiched assembly of ZnO nanowires between graphene\nlayers for a self-powered and fast responsive ultraviolet photodetector<\/strong><\/p>\n\n\n\n Figure: As-grown ZnO NWs on graphene. SEM images of\nas-grown ZnO NWs. Schematic of sandwiched heterostructure-based G\/ZnO NW\/G\ndevice. Response current plotted with the time of UV exposure at zero bias. Variation\nof response current plotted with the time of exposure at -5 V.<\/p>\n\n\n\n Reference:\nNanotechnology, 2016, 27, 095205<\/p>\n\n\n\n https:\/\/doi.org\/10.1088\/0957-4484\/27\/9\/095205<\/a><\/p>\n\n\n\n Conjugated assembly of colloidal zinc oxide quantum\ndots and multiwalled carbon nanotubes for excellent photosensitive ultraviolet\nphotodetector<\/strong><\/p>\n\n\n\n Figure: ZnO QDs@MWCNTs in?between the electrodes. differential\nconductivity\u2013voltage analysis of both pristine ZnO QDs and ZnO QDs@MWCNTs PDs\nin the presence and absence of UV illumination intensity of 0.9 mW cm?2<\/sup>.\n(c) Cyclic photoresponse analysis of both pristine ZnO QDs and ZnO QDs@MWCNTs\nPDs at 5 V and 0.9 mW cm?2<\/sup> UV illumination intensity.<\/p>\n\n\n\n Reference: Nanotechnology\n27 (2016) 355204<\/p>\n\n\n\n https:\/\/doi.org\/10.1088\/0957-4484\/27\/35\/355204<\/a><\/p>\n\n\n\n Energy-Efficient Hydrogenated Zinc Oxide Nanoflakes\nfor High- Performance Self-Powered Ultraviolet Photodetector<\/strong><\/p>\n\n\n\n Figure: H:VZnO NFs. (d) HRTEM images of VZnO NF. Dependence\nof photoresponse of H:VZnO NFs device on the UV illumination intensity at zero\nbias voltage. (b) Cyclic photoresponse analysis of the device at 3 mW\/cm2<\/sup>\nintensity at zero bias voltage.<\/p>\n\n\n\n Reference: ACS\nAppl. Mater. Interfaces 2016, 8, 18182?18188<\/p>\n\n\n\n https:\/\/doi.org\/10.1021\/acsami.6b04954<\/a><\/p>\n\n\n\n Surface photo-charge effect in doped-ZnO nanorods for\nhigh-performance self-powered ultraviolet photodetectors<\/strong><\/p>\n\n\n\n Figure: (a) Schematic of the self-powered\nUV PD. (b) Cyclic photoresponses of #1: ZnO NRs\/PEDOT:PSS, #2: Cl-ZnO\nNRs\/PEDOT:PSS, #3: ZnO NRs\/DMSO-PEDOT:PSS and #4: Cl-ZnO NRs\/DMSO-PEDOT:PSS\nPDs. (d) and (e) are the two-dimensional simulated electric field distribution\nin pristine and Cl-doped ZnO NR and (f ) a magnified image showing the surface\nof Cl-ZnO NR. (g) LHE of pristine ZnO NRs and Cl-ZnO NRs.<\/p>\n\n\n\n Reference: Nanoscale,\n2017, 9, 4536\u20134543<\/p>\n\n\n\n https:\/\/doi.org\/10.1039\/C6NR07670J<\/a><\/p>\n\n\n\n Doping controlled pyro-phototronic effect in self-\npowered zinc oxide photodetector for enhancement of photoresponse<\/strong><\/p>\n\n\n\n Figure: (a) Schematic demonstration of the\nself-powered Cl : ZnO NRs PD. (b) Current\u2013time response of the PD under UV\nirradiation (365 nm wavelength) of intensity, 3 mW cm?2<\/sup> in the\nabsence of external bias voltage, where UV light was exposed for 20 s. The\nbottom schematics illustrate the photoresponse mechanism of the self-powered PD\nat the current-time response stages of A, B and C as shown in (b). (c)\nDependence of photocurrent and pyrocurrent with sheet charge density of NRs.\n(d) Response current plot with respect to sheet charge density.<\/p>\n\n\n\n Reference: Nanoscale, 2018, 10, 3451\u20133459<\/p>\n\n\n\n<\/figure><\/div>\n\n\n\n
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